Hot-carrier-induced degradation of threshold voltage and transconductance in n-channel LDD and SD poly-Si TFTs
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20020794?crawler=true&mimetype=application/pdf
Reference5 articles.
1. Anomalous turn-on voltage degradation during hot-carrier stress in polycrystalline silicon thin-film transistors
2. Effects of the in-situ drain doping on hot-carrier degradation in polysilicon thin film transistors
3. Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs
4. Two-stage hot-carrier degradation and its impact on submicrometer LDD NMOSFET lifetime prediction
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