Development of seed layer deposition and fast copper electroplating into deep microvias for three‐dimensional integration-Reference-Cited by-同舟云学术

Development of seed layer deposition and fast copper electroplating into deep microvias for three‐dimensional integration

Published:2013-04 Issue:4 Volume:8 Page:191-192
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Chen Xiao¹²,Xu Gaowei¹,Luo Le¹

Affiliation:

1. State Key Laboratory of Transducer TechnologyShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050People's Republic of China

2. University of the Chinese Academy of SciencesBeijing100039People's Republic of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2012.0801

Reference7 articles.

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2. BeicaR.SiblerudP.SharbonoC.BerntM.: ‘Advanced metallization for 3D integration’.Proc. 10th Electronics Packaging Technology Conf. 2008 pp.212–218

3. KumagaiK.YonedaY.IzuminoH.et al.: ‘A silicon interposer BGA package with Cu‐filled TSV and multi‐layer Cu‐plating interconnect’.Proc. 58th Electronic Components and Technology Conf. 2008 pp.571–576

4. ChangH.H.ShihY.C.HsiaoZ.C.ChiangC.W.ChenY.H.ChiangK.N.: ‘3D stack chip technology using bottom‐up electroplated TSVs’.Proc. 59th Electronic Components and Technology Conf. 2009 pp.1177–1184

5. BeicaR.SharbonoC.RitzdorfT.: ‘Through silicon via copper electrodeposition for 3D integration’.Proc. 58th Electronic Components and Technology Conf. 2008 pp.577–583

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