A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss
Author:
Affiliation:
1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics Xidian University Xi'an China
2. XiDian‐WuHu Research Institute WuHu China
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/pel2.12169
Reference19 articles.
1. Optimization of SiC UMOSFET Structure for Improvement of Breakdown Voltage and ON-Resistance
2. Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges
3. 4H-SiC Trench MOSFET With L-Shaped Gate
4. Jiang H. et al.:SiC MOSFET with built‐in SBD for reduction of reverse recovery charge and switching loss in 10‐kV applications. In:2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Sapporo Japan 28 May–1 June2017
5. On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET)
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigations of 4H‐SiC trench MOSFET with integrated high‐K deep trench and gate dielectric;IET Power Electronics;2024-04-23
2. Comparative Study on High-temperature Electrical Properties of 1.2 kV SiC MOSFET and JBS-integrated MOSFET;IEEE Transactions on Power Electronics;2023
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