Dual metal drain Ge‐source dopingless TFET with enhanced turn‐ON steep subthreshold swing and high ON‐current
Author:
Affiliation:
1. School of VLSI Design and Embedded SystemsNIT KurukshetraKurukshetraIndia
2. Electronics and Communication Engineering DepartmentNIT KurukshetraKurukshetraIndia
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2017.0157
Reference8 articles.
1. Tunnel field-effect transistors as energy-efficient electronic switches
2. Dopingless tunnel field effect transistor: design & investigation;Kumar M.J.;IEEE Trans. Electron Devices,2010
3. Study of random dopant fluctuation effects in germanium‐source tunnel FETs;Damrongplasit N.;IEEE Trans. Electron Devices,2011
4. An analytical model for Tunnel barrier modulation in triple metal double gate TFET;Sarkar S.S.;IEEE Trans. Electron Devices,2015
5. Optimization of a pocketed dual‐metal‐gate TFET by means of TCAD simulations accounting for quantization‐induced bandgap widening;Beneventi G.B.;IEEE Trans. Electron Devices,2015
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