A Paradigm Shift in Vertical Tunneling Double Gate TFET Performance: Unveiling the Implications of Spacer-Drain Overlap
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-023-02790-z.pdf
Reference24 articles.
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3. Seabaugh AC, Zhang Q (2010) Low-voltage tunnel transistors for beyond CMOS logic. Proc IEEE 98:2095–2110
4. Choi WY, Park BG, Lee JD, Liu TJK (2010) Tunneling field-effect transistors (TFETs) with sub-threshold swing less than 60 mV/dec. IEEE Electron Devices Lett 28(8):743–745
5. Colinge JP, Lee CW, Afzalian A, Akhavan ND, Yan R, Ferain I, Razavi P, O’Neill B, Blake A, White M, Kelleher AM, Mc Carthy B, Murphy R (2010) Nanowire transistors without junctions. Nature Nanotechnol 5(3):225–229
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