Experimental I-V characteristics of AlGaAs/GaAs heterojunction bipolar transistors with very thin bases
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19960853?crawler=true&mimetype=application/pdf
Reference5 articles.
1. Emitter-Base Junction Size Effect on Current GainHfeof AlGaAs/GaAs Heterojunction Bipolar Transistors
2. Vertical scaling in heterojunction bipolar transistors with nonequilibrium base transport
3. Experimental observation of a minority electron mobility enhancement in degenerately dopedp‐type GaAs
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2. Experimental I–V characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with thin bases;Solid-State Electronics;2000-04
3. AlGaAs/GaAs HBTs with extrinsic base regrowth;Journal of Crystal Growth;1998-06
4. The Development of a Highly SelectiveKI/I2/H2O/H2SO4Etchant for the Selective Etching ofAl0.3Ga0.7As over GaAs;Japanese Journal of Applied Physics;1997-06-15
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