AlGaAs/GaAs HBTs with extrinsic base regrowth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Emitter-Base Junction Size Effect on Current GainHfeof AlGaAs/GaAs Heterojunction Bipolar Transistors
2. Vertical scaling in heterojunction bipolar transistors with nonequilibrium base transport
3. Experimental I-V characteristics of AlGaAs/GaAs heterojunction bipolar transistors with very thin bases
4. High-f/sub max/ AlGaAs/InGaAs and AlGaAs/GaAs HBT's with p/sup +//p regrown base contacts
5. Improving the etched/regrown GaAs interface by in-situ etching using tris-dimethylaminoarsenic
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study of Selective Etching of GaAs over AlGaAs and InGaP Semiconductors in High Density Planar Inductively Coupled BCl3/SF6Plasmas;Korean Journal of Materials Research;2005-03-01
2. Low-resistance polycrystalline GaAs grown by gas-source molecular beam epitaxy using CBr4;Journal of Crystal Growth;1998-06
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