Room-temperature resonant tunnelling bipolar transistor XNOR and XOR integrated circuits
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19931199?crawler=true&mimetype=application/pdf
Reference9 articles.
1. Capasso, F., Sen, S., and Beltram, F.: ‘Quantum effect devices’, Sze, S.M., High-speed semiconductor devices, (John Wiley & Sons, NY 1990), p. 465–520
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