Photoinduced voltage shift in a three-barrier, two-well resonant tunneling structure integrated with a 1.2-μm-thick n-type GaAs layer-Reference-Cited by-同舟云学术

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Photoinduced voltage shift in a three-barrier, two-well resonant tunneling structure integrated with a 1.2-μm-thick n-type GaAs layer

Published:2005-08 Issue:3 Volume:28 Page:242-246
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Zhou Xia,Zheng Houzhi,Li Guirong,Hu Bing,Gan Huadong,Zhu Hui

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Resonant tunneling in semiconductor double barriers

2. Resonant tunneling through quantum wells at frequencies up to 2.5 THz

3. Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple valued logic

4. Room-temperature resonant tunnelling bipolar transistor XNOR and XOR integrated circuits

5. Novel bistable device; resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS)

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1. High Speed Data Acquisition and Pre-Processing System of the Photodetector Linear Array with through-Silicon Vias (TSVs) 2.5D/3D Integration;2016 IEEE 66th Electronic Components and Technology Conference (ECTC);2016-05

2. The photoinduced voltage shift behavior in three-barrier resonant tunneling structure;Optical and Quantum Electronics;2016-02-16

3. Photocurrent response in heterojunction photodiode with quantum dot-in-well;Integrated Ferroelectrics;2016-02-12

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