TCAD simulation of a double L‐shaped gate tunnel field‐effect transistor with a covered source

TCAD simulation of a double L‐shaped gate tunnel field‐effect transistor with a covered source–channel

Published:2020-04 Issue:4 Volume:15 Page:272-276
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Xie Haiwu¹²^ORCID,Liu Hongxia¹,Han Tao¹,Li Wei¹,Chen Shupeng¹,Wang Shulong¹

Affiliation:

1. Key Laboratory for Wide‐Band Gap Semiconductor Materials and Devices of EducationSchool of MicroelectronicsXidian UniversityXi'an710071ShaanxiPeople's Republic of China

2. School of Physics and Electronic Information EngineeringQinghai Normal UniversityXining810016QinghaiPeople's Republic of China

Funder

National Natural Science Foundation of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2019.0398

Reference28 articles.

1. Symmetric U-Shaped Gate Tunnel Field-Effect Transistor

2. Optimization and Scaling of Ge-Pocket TFET

3. Double-Gate TFET With Vertical Channel Sandwiched by Lightly Doped Si

4. Temperature independent current biasing employing TFET

5. HuangQ.HuangR.ZhanZ.et al.: ‘A novel Si tunnel FET with 36 mV/Dec subthreshold slope based on junction depleted‐modulation through striped gate configuration’.Proc. IEEE Int. Electron Devices Meeting (IEDM) San Francisco USA 2012 pp.8.5.1–8.5.4

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