High speed etching of silicon in KOH + NH 2 OH solution at lower temperatures for the fabrication of through holes in silicon wafer
Author:
Affiliation:
1. Research Centre ImaratHyderabad500 069India
2. Department of Mechanical and Aerospace EngineeringIndian Institute of TechnologyHyderabad502285India
3. Department of PhysicsIndian Institute of TechnologyHyderabad502285India
Publisher
Institution of Engineering and Technology (IET)
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2019.0570
Reference22 articles.
1. Effect of process parameters on via formation in Si using deep reactive ion etching
2. Anisotropic Etching of Crystalline Silicon in Alkaline Solutions: I . Orientation Dependence and Behavior of Passivation Layers
3. Anisotropic etching in low‐concentration KOH: effects of surfactant concentration
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1. Enhanced etching characteristics of Si{100} in NaOH-based two-component solution;Micro and Nano Systems Letters;2022-08-01
2. Optimization of corner compensations in wet etching of silicon for a MEMS Z-axis accelerometer;Microelectronic Engineering;2022-04
3. High speed silicon wet anisotropic etching for applications in bulk micromachining: a review;Micro and Nano Systems Letters;2021-02-22
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