Anisotropic etching in low‐concentration KOH: effects of surfactant concentration-Reference-Cited by-同舟云学术

Anisotropic etching in low‐concentration KOH: effects of surfactant concentration

Published:2015-04 Issue:4 Volume:10 Page:224-228
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Pal Prem¹,Ashok Akarapu¹,Haldar Subhomoy¹,Xing Yan²,Sato Kazuo³

Affiliation:

1. Department of Physics Indian Institute of Technology HyderabadMEMS and Micro/Nano Systems LaboratoryIndia

2. Laboratory of Micro‐Nano Medical DevicesDepartment of Mechanical EngineeringSoutheast UniversityNanjingChina

3. Department of Mechanical EngineeringAichi Institute of TechnologyAichiJapan

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2014.0685

Reference35 articles.

1. Anisotropic Etching of Crystalline Silicon in Alkaline Solutions: I . Orientation Dependence and Behavior of Passivation Layers

2. Anoop PrakashA.B.JencyG.J.MathewM.C.: ‘A review of various wet etching techniques used in micro fabrication for real estate consumption’.IJCA Proc. on Int. Conf. on Innovations In Intelligent Instrumentation Optimization and Electrical Sciences ICIIIOES (7) December2013 pp.26–31

3. Fast etching of silicon with a smooth surface in high temperature ranges near the boiling point of KOH solution

4. Preparation of silicon thin diapharagms free from micropyramids using anisotropic etching in KOH solutions.

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