Analysis study of sensitive volume and triggering criteria of single‐event burnout in super‐junction metal‐oxide semiconductor field‐effect transistors-Reference-Cited by-同舟云学术

Analysis study of sensitive volume and triggering criteria of single‐event burnout in super‐junction metal‐oxide semiconductor field‐effect transistors

Published:2014-05 Issue:3 Volume:8 Page:197-204
ISSN:1751-858X
Container-title:IET Circuits, Devices & Systems
language:en
Short-container-title:IET Circuits, Devices & Systems

Author:

Zerarka Moustafa¹²,Austin Patrick¹³,Morancho Frédéric¹³,Isoird Karine¹³,Arbess Houssam¹²,Tasselli Josiane¹²

Affiliation:

1. LAASCNRS7 avenue du colonel Roche, BP 54200ToulouseCedex4 F‐31031France

2. LAASUniv de ToulouseToulouseF‐31031France

3. Univ de Toulouse, UPS, LAASToulouseF‐31031France

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2013.0211

Reference25 articles.

1. Computer simulation of ionizing radiation burnout in power MOSFETs

2. Experimental and 2D simulation study of the single-event burnout in N-channel power MOSFETs

3. Numerical analysis of short-circuit safe operating area for p-channel and n-channel IGBTs

4. Nichols D.K. McCarthy K.P. Coss J.R. et al.: ‘Observations of single event failure in power MOSFETs’.IEEE Data Workshop Record July1994 pp.41–54

5. Analysis of SEB and SEGR in super-junction MOSFETs

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