Sensitivity study of super-junction power MOSFETs by spatial and depth resolved heavy ion SEE mapping with various bias, LETs and ion ranges

Author:

Gerold M.,Dollinger G.,Günther L.,Reindl J.,Rüb M.

Funder

Bundesministerium für Bildung und Forschung

Deutsches Zentrum für Luft- und Raumfahrt

Publisher

Elsevier BV

Reference21 articles.

1. Advanced Power MOSFET Concepts;Baliga,2010

2. L. Scheick, Testing Guideline for Single Event Gate Rupture (SEGR) of Power MOSFETs, NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance.

3. A review of the techniques used for modeling single-event effects in power MOSFETs;Johnson;IEEE Trans. Nucl. Sci.,1996

4. Destructive single-event effects in semiconductor devices and ICs;Sexton;IEEE Trans. Nucl. Sci.,2003

5. Enhanced avalanche multiplication factor and single-event burnout;Kuboyama;IEEE Trans. Nucl. Sci.,2003

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