Highly efficient dual‐band GaN power amplifier utilising pin diode‐based tunable harmonic load matching
Author:
Affiliation:
1. Electrical and Electronics Engineering DepartmentMiddle East Technical UniversityDumlupinar Bulvari No: 106800AnkaraTurkey
2. Microwave Components DivisionAselsan Inc.Konya Yolu 8. Km, Ogulbey Mah. 3051. Sok. No: 306830AnkaraTurkey
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-map.2018.5318
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4. Analysis and experiments for high-efficiency class-F and inverse class-F power amplifiers
5. High-efficiency concurrent dual-band class-F and inverse class-F power amplifier
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