Dual‐band filtering power amplifier with extended passband bandwidths and wide stopband rejection

Author:

Dong Gaoya12ORCID,Yang Xiaolong1,Fang Yunnan3,Tenzeris Manos M.3

Affiliation:

1. School of Computer and Communication Engineering University of Science and Technology Beijing Beijing China

2. Shunde Innovation School University of Science and Technology Beijing Foshan Guangdong China

3. School of Electrical Computer Engineering Georgia Institute of Technology Atlanta Georgia USA

Abstract

AbstractThis article presents a dual‐band filtering power amplifier (DB‐FPA) with extended passband bandwidths and wide stopband rejection, which is helpful in reducing the number of microwave components in the dual‐band radio frequency front end, resulting in compact circuit size and low loss. In the designed DB‐FPA, a wideband low‐pass filter is applied as the input matching network (IMN) to provide wideband impedance matching and good stopband rejection, while a dual‐band filtering impedance transformation is adopted as the output matching network (OMN) to provide dual‐band impedance matchings and filtering responses simultaneously. Specifically, the IMN is constructed by high‐impedance transmission‐line sections and low‐impedance open‐circuit stubs. The OMN is designed based on the specific external quality factors and coupling coefficients during two bands, resulting in dual‐band impedance transformations and dual‐band filtering responses. Then, based on the above IMN and OMN, the design procedure of the presented DB‐FPA is summarised. To verify the proposed idea, a novel DB‐FPA has been fabricated and measured. During the two frequency bands, the measured maximum power added efficiencies are 55.11% and 47.78% within 33.0 dBm input power, while the measured peak gains are 15.4 and 14.0 dB within 15.0 dBm input power.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

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