Multi‐output stacked class‐E millimetre‐wave power amplifiers in 45 nm silicon‐on‐insulator metal–oxide–semiconductor: theory and implementation
Author:
Affiliation:
1. Department of Electrical EngineeringColumbia UniversityNew YorkNY10027USA
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-map.2015.0108
Reference28 articles.
1. Analysis and Design of Stacked-FET Millimeter-Wave Power Amplifiers
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3. Bhat R. Chakrabarti A. Krishnaswamy H.: ‘Large‐scale power‐combining and linearization in watt‐class mmWave CMOS power amplifiers’.IEEE RFIC 2013 pp.283–286
4. Balteanu A. Sarkas I. Dacquay E. Tomkins A. Voinigescu S.P.: ‘A 45‐GHz 2‐bit power DAC with 24.3 dBm output power >14Vppdifferential swing and 22% peak PAE in 45‐nm SOI CMOS’.IEEE RFIC 2012 pp.319–322
5. High-Power High-Efficiency Class-E-Like Stacked mmWave PAs in SOI and Bulk CMOS: Theory and Implementation
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