A 45-GHz, 2-bit power DAC with 24.3 dBm output power, >14 Vpp differential swing, and 22% peak PAE in 45-nm SOI CMOS

Author:

Balteanu Andreea,Sarkas Ioannis,Dacquay Eric,Tomkins Alex,Voinigescu Sorin P.

Publisher

IEEE

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Watt-Level, Direct RF Modulation in CMOS SOI With Pulse-Encoded Transitions for Adjacent Channel Leakage Reduction;IEEE Transactions on Microwave Theory and Techniques;2019-12

2. Ultra-Broadband I/Q RF-DAC Transmitters;IEEE Transactions on Microwave Theory and Techniques;2017-12

3. Millimeter-Wave Stacked-Transistor Amplifiers;Millimeter-Wave Power Amplifiers;2017

4. Multi‐output stacked class‐E millimetre‐wave power amplifiers in 45 nm silicon‐on‐insulator metal–oxide–semiconductor: theory and implementation;IET Microwaves, Antennas & Propagation;2015-10

5. $Q$-Band Spatially Combined Power Amplifier Arrays in 45-nm CMOS SOI;IEEE Transactions on Microwave Theory and Techniques;2015-06

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