Growth and characterisation of GaInAsP/InP double heterostructure material for stripe-geometry lasers emitting near 1.3μm-Reference-Cited by-同舟云学术

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Growth and characterisation of GaInAsP/InP double heterostructure material for stripe-geometry lasers emitting near 1.3μm

Published:1979 Issue:6 Volume:3 Page:179
ISSN:0308-6968
Container-title:IEE Journal on SolidState and Electron Devices
language:en
Short-container-title:IEE J. SolidState Electron. Devices UK

Author:

Hersee S.D.,Carter A.C.,Goodfellow R.C.,Hawkins G.,Griffith I.

Publisher

Institution of Engineering and Technology (IET)

Subject

General Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/ij-ssed.1979.0036?crawler=true&mimetype=application/pdf

Reference11 articles.

1. Greene, P.D., and Henshall, G.D.: Growth and characteristics of (Ga, In)(As, P)/InP double heterostructure lasers, p. 173–178 see pp.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Semiconductor Lasers—Materials and Devices;Fundamentals of Laser Optics;1994

2. Improvement of the probe profiling method for InP/GaInAsP structures using Kr+ion bombardment;Applied Physics Letters;1992-06-08

3. Identification of the source of pinhole defects in InGaAsP/InP laser wafers;Journal of Crystal Growth;1986-12

4. Determination of p-n Junctions in In P/GaInAsP Laser Heterostructures Using a Profilometer;Physica Status Solidi (a);1983-09-16

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