Identification of the source of pinhole defects in InGaAsP/InP laser wafers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. GaInAsP Alloy Semiconductors;Nakajima,1982
2. Manifestations of melt‐carry‐over in InP and InGaAsP layers grown by liquid phase epitaxy
3. The effect of melt-carry-over on the LPE growth of planar buried InGaAsP/ InP double heterostructures
4. Growth and characterisation of GaInAsP/InP double heterostructure material for stripe-geometry lasers emitting near 1.3μm
5. Morphological Study of Thermal Decomposition of InP Surfaces
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The effect of preamorphization energy on ultrashallow junction formation following ultrahigh-temperature annealing of ion-implanted silicon;Journal of Applied Physics;2005-02-15
2. InGaAsP/InP distributed feedback laser wafers grown by an interrupted liquid phase epitaxy technique;Journal of Crystal Growth;1988-10
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