Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19970805?crawler=true&mimetype=application/pdf
Reference7 articles.
1. High-power-density GaAs MISFETs with a low-temperature-grown epitaxial layer as the insulator
2. High I–V product LT-GaAs MISFET structure
3. Temperature investigation of the gate-drain diode of power GaAs MESFET with low-temperature-grown (Al)GaAs passivation
4. Electrical characteristics of low temperature-Al0.3Ga0.7As
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Use of amorphous carbon as a gate insulator for GaAs and related compounds;Microelectronic Engineering;2003-10
2. Thermal stability of MISFET with low-temp molecular-beam epitaxy-grown GaAs and Al/sub 0.3/Ga/sub 0.7/As gate ins;IEEE Transactions on Reliability;2000-06
3. A quasianalytical model for LT-GaAs and LT-Al0.3Ga0.7As MISFET devices;Microwave and Optical Technology Letters;2000
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