High I–V product LT-GaAs MISFET structure
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19930782?crawler=true&mimetype=application/pdf
Reference5 articles.
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thermal stability of MISFET with low-temp molecular-beam epitaxy-grown GaAs and Al/sub 0.3/Ga/sub 0.7/As gate ins;IEEE Transactions on Reliability;2000-06
2. A quasianalytical model for LT-GaAs and LT-Al0.3Ga0.7As MISFET devices;Microwave and Optical Technology Letters;2000
3. 550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs;Electronics Letters;1998
4. Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator;Electronics Letters;1997
5. Capacitance behavior of GaAs-MIS structures with low-temperature grown GaAs dielectric;Journal of Electronic Materials;1996-12
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