2–46.5 GHz quasi-static 2:1 frequency divider IC using InAlAs/InGaAs/InP HEMTs
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19970939?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Ultra-high-speed InAlAs/InGaAs HEMT ICs using pn-level-shift diodes
2. 0.1-μm InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD
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3. 66 GHz 2:1 static frequency divider using 100 nm metamorphic enhancement HEMT technology;Electronics Letters;2002
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