Ultra-high-speed InAlAs/InGaAs HEMT ICs using pn-level-shift diodes-Reference-Cited by-同舟云学术

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Ultra-high-speed InAlAs/InGaAs HEMT ICs using pn-level-shift diodes

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Container-title:Proceedings of International Electron Devices Meeting
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Author:

Enoki T.,Umeda Y.,Osafune K.,Ito H.,Ishii Y.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/3584/10696/00497212.pdf?arnumber=497212

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 100-nm T-gate InAlAs/InGaAs InP-based HEMTs with f T = 249 GHz and f max = 415 GHz;Chinese Physics B;2014-03

2. High-Speed and Low-Power Non-Return-to-Zero Delayed Flip-Flop Circuit Using Resonant Tunneling Diode/High Electron Mobility Transistor Integration Technology;Japanese Journal of Applied Physics;2007-04-24

3. 74 GHz dynamic frequency divider using InAlAs/InGaAs/InP HEMTs;Electronics Letters;1999

4. 45 Gbit/s decision IC module using InAlAs/InGaAs/InP HEMTs;Electronics Letters;1999

5. Characterization of Wave Propagation on Traveling-Wave Field Effect Transistors;Japanese Journal of Applied Physics;1998-12-15

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