Pressure dependence of threshold current in GaxIn1−xAsyP1−y lasers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19820357?crawler=true&mimetype=application/pdf
Reference12 articles.
Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes;Applied Physics Letters;2011-10-03
2. Influences of thermal annealing and indium content on mechanical stresses and optoelectronic characteristics of light emitter diodes;Journal of the Chinese Institute of Engineers;2008-03
3. Experimental determination of the band gap dependence of Auger recombination in InGaAs∕InP multiple quantum well lasers at room temperature;Applied Physics Letters;2007-04-16
4. Amplified spontaneous emission measurements in a diamond anvil cell: A tool to investigate laser diode gain under high pressure;physica status solidi (b);2004-11
5. Radiative and Auger recombination in 1.3μm InGaAsP and 1.5μm InGaAs quantum-well lasers measured under high pressure at low and room temperatures;Applied Physics Letters;2004-07-19
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