Influences of thermal annealing and indium content on mechanical stresses and optoelectronic characteristics of light emitter diodes
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/02533839.2008.9671382
Reference26 articles.
1. Influence of pressure on temperature sensitivity of GaxIn1−xAsyP1−y lasers
2. Growth of GaN on highly mismatched substrate and its application to novel devices
3. The role of high-temperature island coalescence in the development of stresses in GaN films
4. A tunable blue light emission of InGaN/GaN quantum well through thermal interdiffusion
5. Longitudinal anisotropic stress and deformation in multilayered film heterostructures due to lattice misfit
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