Investigation on the release of residual stress in a folded structure applied to MEMS devices-Reference-Cited by-同舟云学术

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Investigation on the release of residual stress in a folded structure applied to MEMS devices

Published:2021-07-15 Issue:9 Volume:16 Page:443-447
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Tang Chuying¹²³^ORCID,Yu Hongyu²⁴⁵,Sun Chengliang¹,Zhang Yi¹,Wang Liang²,Cai Yao¹,Wu Jingyi²,Wang Qing²⁴⁵,Liu Sheng¹²

Affiliation:

1. The Institute of Technological Sciences Wuhan University Wuhan China

2. School of Microelectronics Southern University of Science and Technology Shenzhen China

3. The School of Power and Mechanical Engineering Wuhan University Wuhan China

4. Engineering Research Center of Integrated Circuits for Next‐Generation Communications, Ministry of Education Shenzhen China

5. Shenzhen Institute of Wide‐bandgap Semiconductors Shenzhen China

Funder

National Natural Science Foundation of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mna2.12026

Reference17 articles.

1. Micro-Raman measurement of bending stresses in micromachined silicon flexures

2. Stress analysis of silicon membranes with electroplated permalloy films using Raman scattering

3. Band gap shift of Cu2ZnSnS4 thin film by residual stress

4. Elastic Coefficients of Zn1−x Be x O Solid Solutions: a First-Principles Study

5. Suspended gate field effect transistor type microelectromechanical systems resonators modelling with micro‐Raman spectroscopy measured residual stress

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