Suspended gate field effect transistor type microelectromechanical systems resonators modelling with micro‐Raman spectroscopy measured residual stress-Reference-Cited by-同舟云学术

Suspended gate field effect transistor type microelectromechanical systems resonators modelling with micro‐Raman spectroscopy measured residual stress

Published:2013-10 Issue:10 Volume:8 Page:614-618
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Zhao Chenxu¹,Li Mengwei¹,Guo Xin¹,Liu Zewen¹

Affiliation:

1. Institute of MicroelectronicsTsinghua UniversityBeijingPeople's Republic of China

Funder

China Postdoctoral Science Foundation

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2013.0272

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4. Specific detection of proteins using nanomechanical resonators

5. Prediction of residual stress distribution in multi-stacked thin film by curvature measurement and iterative FEA

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