Direct nitridation of high-k metal oxide thin films using argon excimer sources
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20052859?crawler=true&mimetype=application/pdf
Reference9 articles.
1. Ultrathin nitride/oxide (N/O) gate dielectrics for p/sup +/-polysilicon gated PMOSFETs prepared by a combined remote plasma enhanced CVD/thermal oxidation process
2. �ber das Tantalnitrid Ta3N5 und das Tantaloxidnitrid TaON
3. Controlled Growth of TaN, Ta3N5, and TaOxNy Thin Films by Atomic Layer Deposition
4. Electrical characteristics of an ultrathin (1.6 nm) TaOxNy gate dielectric
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1. Ultraviolet excimer radiation from nonequilibrium gas discharges and its application in photophysics, photochemistry and photobiology;Journal of Optical Technology;2012-08-31
2. An Open Argon Dielectric Barrier Discharge VUV-Source;Plasma Processes and Polymers;2010-06-22
3. UV detection for excimer lamps using CVD diamond in various gaseous atmospheres;Diamond and Related Materials;2007-03
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