Effects of grain boundary passivation on the characteristics of p-channel MOSFETs in LPCVD polysilicon-Reference-Cited by-同舟云学术

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Effects of grain boundary passivation on the characteristics of p-channel MOSFETs in LPCVD polysilicon

Published:1983 Issue:23 Volume:19 Page:993
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Malhi S.D.S.,Shah R.R.,Shichijo H.,Pinizzotto R.F.,Chen C.E.,Chatterjee P.K.,Lam H.W.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19830674?crawler=true&mimetype=application/pdf

Reference8 articles.

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enlargement of on/off current ratio in poly-silicon TFT by selective crystallization method;Journal of Non-Crystalline Solids;1998-05

2. Applications;Polycrystalline Silicon for Integrated Circuits and Displays;1998

3. A New Offset Gated Poly-Si TFT Using a Wet Oxidation;MRS Proceedings;1994

4. Role of negatively charged vacancies in secondary grain growth in polycrystalline silicon during rapid thermal annealing;Applied Physics Letters;1991-05-27

5. LPCVD Polysilicon SOI MOSFET Technology for 3-D Integration;IETE Journal of Research;1990-05

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