Enlargement of on/off current ratio in poly-silicon TFT by selective crystallization method-Reference-Cited by-同舟云学术

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Enlargement of on/off current ratio in poly-silicon TFT by selective crystallization method

Published:1998-05 Issue: Volume:227-230 Page:1213-1216
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Jeon Jae-Hong,Park Cheol-Min,Choi Kwon-Young,Kim Cheon-Hong,Han Min-Koo

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Poly-Si TFT devices and their application to LCDs;Firester;Jpn. Display,1992

2. Polysilicon TFT circuit design and performance;Lewis;IEEE J. Solid State Circuits,1992

3. Characterization of polycrystalline silicon MOS transistors and its film properties;Onga;Jpn. J. Appl. Phys.,1982

4. Anomalous leakage current in LPCVD polysilicon MOSFET's;Fossum;IEEE Trans. Electron Devices,1985

5. Effects of grain boundary passivation on the characteristics of p-channel MOSFET's in LPCVD polysilicon;Malhi;Electron. Lett.,1983

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Temperature Crystallized Poly-Si on Molybdenum Substrates for Thin-Film Transistor Application;Solid State Phenomena;2003-06

2. High temperature crystallized poly-Si on Mo substrates for TFT application;Thin Solid Films;2003-03

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