Low-pressure MOVPE growth of Sn-doped GaAs
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19830721?crawler=true&mimetype=application/pdf
Reference10 articles.
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dopant incorporation in GaAs and AlGaAs grown by MOMBE for high speed devices;Journal of Electronic Materials;1992-03
2. Sn doping of GaAs and AlGaAs by MOMBE using tetraethyltin;Journal of Crystal Growth;1991-09
3. Sn doping of GaAs and AlGaAs grown by metalorganic molecular beam epitaxy;Journal of Crystal Growth;1991-02
4. Photoluminescence of Heavily Doped SnGaAs Grown by Metal Organics Vapor Phase Epitaxy;physica status solidi (a);1990-01-16
5. References;Thin Films by Chemical Vapour Deposition;1990
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