Inversion-controlled switching mechanism of m.i.s.s. devices-Reference-Cited by-同舟云学术

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Inversion-controlled switching mechanism of m.i.s.s. devices

Published:1980 Issue:3 Volume:127 Page:119
ISSN:0143-7100
Container-title:IEE Proceedings I Solid State and Electron Devices
language:en
Short-container-title:IEE Proc. I Solid State Electron. Devices UK

Author:

Sarrabayrouse G.,Buxo J.,Owen A.E.,Munoz Yague A.,Sabaa J-P.

Publisher

Institution of Engineering and Technology (IET)

Subject

General Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/ip-i-1.1980.0023?crawler=true&mimetype=application/pdf

Reference21 articles.

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of modulation doped effect in negative differential resistance field effect transistors (NDRFETs);Microelectronics Reliability;1998-03

2. Switching in amorphous-silicon devices;Physical Review B;1994-05-15

3. Photodetectors based on metal-tunnel insulator-semiconductor structures;Sensors and Actuators A: Physical;1993-09

4. A thyristor model of switching in metal‐thin insulator‐semiconductor‐semiconductor devices: The influence of insulating layer and illumination;Journal of Applied Physics;1990-12-15

5. A phenomenological model of switching in metal‐thin insulator‐semiconductor‐semiconductor devices: A development of the analogy with the thyristor;Journal of Applied Physics;1989-03

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