Analytical modelling of depletion-mode MOSFET with short- and narrow-channel effects-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Analytical modelling of depletion-mode MOSFET with short- and narrow-channel effects

Published:1981 Issue:6 Volume:128 Page:225
ISSN:0143-7100
Container-title:IEE Proceedings I Solid State and Electron Devices
language:en
Short-container-title:IEE Proc. I Solid State Electron. Devices UK

Author:

Balley N.,Baylac B.

Publisher

Institution of Engineering and Technology (IET)

Subject

General Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/ip-i-1.1981.0054?crawler=true&mimetype=application/pdf

Reference15 articles.

1. Merckel, G.: ‘Ion implanted MOS transistors — depletion mode devices’, Process and device modeling for integrated circuit design, 1977), p. 677–688 NATO Advanced Study institutes series: No 21, série E

2. Sigg, H.J.: ‘Characterization of depletion type MOS transistors for use in vlsi circuits’, From electronics to microelectronics, (North-Holland 1980), p. 72–74

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic-scale tomography of semiconductor nanowires;Materials Science in Semiconductor Processing;2015-12

2. A physics-based short-channel current–voltage model for buried-channel MOSFETs;Solid-State Electronics;1999-07

3. Threshold Voltage;Computational Microelectronics;1993

4. Buried-channel MOSFET model for SPICE;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;1991

5. Threshold voltage characteristics of ion-implanted depletion MOSFETs;Solid-State Electronics;1988-09

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP