Ion Implanted MOS Transistors — Depletion Mode Devices-Reference-Cited by-同舟云学术

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Ion Implanted MOS Transistors — Depletion Mode Devices

Published:1977 Issue: Volume: Page:677-688
ISSN:
Container-title:Process and Device Modeling for Integrated Circuit Design
language:
Short-container-title:

Author:

Merckel G.

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-94-011-7583-8_24.pdf

Reference6 articles.

1. Y. Gris, J. Gautier, G. Merckel, J.P. Suat, ESSDERC 76, Munich, 13-16 Sept. 1976.

2. G. Merckel, Int. Techn. Rept.

3. B. Baylac, G. Merckel, ESSCIRC 76, Toulouse, 21-2t Sept.1976.

4. J. Gautier, Int. Techn. Rept.

5. Y. Gris, J.P. Suat, G. Merckel, Techn. Rept. LETI/MEA 1185, Nov. 1976.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mobility and transverse electric field effects in channel conduction of wrap-around-gate nanowire MOSFETs;IEE Proceedings - Circuits, Devices and Systems;2004

2. Threshold voltage control in buried-channel MOSFETs;Solid-State Electronics;1997-09

3. Hot carrier effects in depletion-mode MOSFETs;International Journal of Electronics;1986-04

4. Analytical modelling of depletion-mode MOSFET with short- and narrow-channel effects;IEE Proceedings I Solid State and Electron Devices;1981

5. Scaled m.o.s. circuits: performances and simulation;IEE Proceedings I Solid State and Electron Devices;1980

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