Threshold voltage characteristics of ion-implanted depletion MOSFETs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Modeling of an ion-implanted silicon-gate depletion-mode IGFET
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4. A device model for buried-channel CCD's and MOSFET's with Gaussian impurity profiles
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2. Threshold voltage control in buried-channel MOSFETs;Solid-State Electronics;1997-09
3. Threshold Voltage;Computational Microelectronics;1993
4. A new description of dual γ-factor threshold voltage with continuous second-order derivative;Solid-State Electronics;1992-11
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