Laterally oxidised InAlAs-oxide/InP distributed Bragg reflectors
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19961097?crawler=true&mimetype=application/pdf
Reference9 articles.
1. Double‐fused 1.52‐μm vertical‐cavity lasers
2. Improved reflectivity of AlPSb/GaPSb Bragg reflector for 1.55 µm wavelength
3. Record low-threshold index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure
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1. High efficiency planar MCLEDs;physica status solidi (b);2005-09
2. GaInAsP Microcylinder (Microdisk) Injection Laser with AlInAs(Ox) Claddings;Japanese Journal of Applied Physics;2001-09-15
3. All selective metalorganic vapor phase epitaxy grown buried-heterostructure laser diodes with selectively oxidized AlInAs current-confinement layer;Applied Physics Letters;2000-09-25
4. Increased lateral oxidation rates of AllnAs on InP using short-period superlattices;Journal of Electronic Materials;2000-09
5. 1.55-μm vertical-cavity surface-emitting lasers with directly grown AlGaAs/GaAs and Al x O y /GaAs DBR mirrors;SPIE Proceedings;1999-04-29
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