Increased lateral oxidation rates of AllnAs on InP using short-period superlattices-Reference-Cited by-同舟云学术

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Increased lateral oxidation rates of AllnAs on InP using short-period superlattices

Published:2000-09 Issue:9 Volume:29 Page:1100-1104
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Hall E.,Huntington A.,Naone R. L.,Kroemer H.,Coldren L. A.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-004-0271-y.pdf

Reference11 articles.

1. P.A. Parikh, P.M. Chavarkar, and U.K. Mishra, IEEE Electron Dev. Lett. 18, 111 (1997).

2. E.I. Chen, N. Holonyak, Jr., S.A. Maranowski, Appl. Phys. Lett. 66, 2688–90 (1995).

3. M.H. MacDougal, P.D. Dapkus, V. Pudikov, H. Zhao, and G.M. Yang, IEEE Photonics Technol. Lett. 7, 229 (1995).

4. K.D. Choquette, K.L. Lear, R.P. Schneider, and K.M. Geib, Appl. Phys. Lett. 66, 3413 (1995).

5. H. Takenouchi, T. Kagawa, Y. Ohiso, T. Tadokoro, and T. Kurokawa, Electron. Lett. 32, 1671 (1996).

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3. Lattice-matched Al0.95Ga0.05AsSb oxide for current confinement in InP-based long wavelength VCSELs;Journal of Crystal Growth;2003-04

4. Al0.95Ga0.05As0.56Sb0.44 for lateral oxide-confinement layer in InP-based devices;Applied Physics Letters;2003-03-03

5. Advances in long-wavelength single-mode VCSELs and packaging approaches for single-mode fiber applications;2001 Proceedings. 51st Electronic Components and Technology Conference (Cat. No.01CH37220)

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