Atomic variations in digital alloy InGaP/InGaAlP multiple quantum wells due to thermal treatment-Reference-Cited by-同舟云学术

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Atomic variations in digital alloy InGaP/InGaAlP multiple quantum wells due to thermal treatment

Published:2014-10-07 Issue:11 Volume:53 Page:115201
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shin Jae Won,Jeong Hu Young,Yoo Seung Jo,Lee Seok-Hoon,Han Jun Hee,Lee Jeong Yong,Ahn Jun Sung,Park Chang Young,Park Kwang Wook,Lee Yong-Tak,Kim Jin-Gyu,Kim Tae Whan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=11/a=115201/pdf

Reference28 articles.

1. Band parameters for III–V compound semiconductors and their alloys

2. Nanoscale avalanche photodiodes for highly sensitive and spatially resolved photon detection

3. Monolithic integration of InP-based transistors on Si substrates using MBE

4. Light-Emitting Diodes

5. Impact of planar microcavity effects on light extraction-Part I: basic concepts and analytical trends

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Assessment of Optical and Phonon Characteristics in MOCVD-Grown (AlxGa1−x)0.5In0.5P/n+-GaAs Epifilms;Molecules;2024-09-04

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