Author:
Shahid M.A.,Gwilliam R.,Sealy B.J.
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Cited by
9 articles.
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1. Ion implantation in gallium arsenide MESFET technology;IEEE Transactions on Electron Devices;1992
2. Damage induced in GaAs by high-energy Be, Si and Se implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-07
3. Silicon Nitride in Encapsulation and Recrystallization;Si Silicon;1991
4. Shallow Ion Implantation in Gallium Arsenide Mesfet Technology;MRS Proceedings;1991
5. The microstructure of short-time-annealed Se+ -implanted GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-10