Damage induced in GaAs by high-energy Be, Si and Se implantation-Reference-Cited by-同舟云学术

Damage induced in GaAs by high-energy Be, Si and Se implantation

Published:1991-07 Issue: Volume:59-60 Page:609-613
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Trudeau Yves B.,Kajrys George E.,Gagnon Gilles,Brebner John L.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. A. Azelmad and A. Yelon, submitted to Nucl. Instr. and Meth. B.

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4. Proc. Workshop on Technology in Accelerator Mass Spectroscopy;Middleton,1987

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3. Rapid Isothermal Processing (RIP);Handbook of Compound Semiconductors;1995

4. Damage accumulation and amorphization in GaAs by MeV Si+ ion implantation at different tilt angles;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-05

5. ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY;International Journal of Modern Physics B;1993-12-30