Robust fuzzy SRAM for accurate and ultra‐low‐power MVL and fuzzy logic applications-Reference-Cited by-同舟云学术

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Robust fuzzy SRAM for accurate and ultra‐low‐power MVL and fuzzy logic applications

Published:2016-12 Issue:25 Volume:52 Page:2032-2034
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Moonesan M.¹,Faghih Mirzaee R.²^ORCID,Sam Daliri M.³,Navi K.³

Affiliation:

1. Department of Computer Engineering, Central Tehran BranchIslamic Azad UniversityTehranIran

2. Department of Computer Engineering, Shahr‐e‐Qods BranchIslamic Azad UniversityTehranIran

3. Faculty of Electrical and Computer EngineeringShahid Beheshti UniversityG.C.TehranIran

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2016.2932

Reference11 articles.

1. Design of ternary static memory cell using carbon nanotube‐based transistors;You K.;Micro Nano Lett.,2011

2. Logic Circuits with Carbon Nanotube Transistors

3. Carbon nanotube electronics: recent advances

4. Fuzzy flip‐flop and fuzzy registers;Hirota K.;Fuzzy Set Syst.,1989

5. Voltage mirror circuit by carbon nanotube field effect transistors for mirroring dynamic random access memories in multiple‐valued logic and fuzzy logic

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of ternary logic gates and buffer- based memory cell in nanoelectronics;International Journal of Electronics;2021-11-28

2. High-performance quaternary latch and D-Type flip-flop with selective outputs;Microelectronics Journal;2021-07

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