5.3A/400V normally‐off AlGaN/GaN‐on‐Si MOS‐HEMT with high threshold voltage and large gate swing-Reference-Cited by-同舟云学术

5.3A/400V normally‐off AlGaN/GaN‐on‐Si MOS‐HEMT with high threshold voltage and large gate swing

Published:2013-01 Issue:3 Volume:49 Page:221-222
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Dong Zhihua¹,Tan Shuxin¹,Cai Yong¹,Chen Hongwei²,Liu Shenghou²,Xu Jicheng³,Xue Lu³,Yu Guohao¹,Wang Yue¹,Zhao Desheng⁴,Hou Keyu⁴,Chen Kevin J.²,Zhang Baoshun¹

Affiliation:

1. Key Labatory of Nanodevices and ApplicationsSuzhou Institute of Nano‐Tech and Nano‐BionicsChinese Academy of SciencesNo. 398 Ruoshui RoadSuzhouPeople's Republic of China

2. Hong Kong University of Science and TechnologyClear Water BayKowloonHong Kong

3. Suzhou Silikron Semiconductor Technology Corp. LtdNo. 428 Xinglong RoadSuzhouPeople's Republic of China

4. Nano Fabrication FacilitySuzhou Institute of Nano‐Tech and Nano‐BionicsNo. Chinese Academy of Sciences398, Ruoshui RoadSuzhou215123People's Republic of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2012.3153

Reference5 articles.

1. Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate

2. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

3. 1200‐V normally off GaN‐on‐Si field‐effect transistors with low dynamic on‐resistance;Chu R.;IEEE Electron Device Letters,2011

4. Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-κ Oxide Charge Engineering on GaN for Normally Off HEMTs;Journal of Electronic Materials;2024-05-03

2. A Novel Inverse-L Buried GaN Current-Aperture Vertical Electron Transistors;2023 Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC);2023-11-10

3. Research on vertical GaN devices based on gradient Al components;Frontiers in Physics;2023-11-02

4. Influence of pulsed laser deposited hafnium oxide thin film as gate dielectric on the fabrication of Al0.1Ga0.9N/GaN MOS-HEMT;Materials Science in Semiconductor Processing;2023-01

5. Experimental Results for AlGaN/GaN HEMTs Improving Breakdown Voltage and Output Current by Electric Field Modulation;IEEE Transactions on Electron Devices;2021-05