A sub‐6GHz wideband low noise amplifier with high gain and low noise figure in 110‐nm SOI CMOS-Reference-Cited by-同舟云学术

A sub‐6GHz wideband low noise amplifier with high gain and low noise figure in 110‐nm SOI CMOS

Published:2023-09 Issue:17 Volume:59 Page:
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electronics Letters

Author:

Wang Xiaowei¹^ORCID,Li Zhiqun²,Xu Tong³

Affiliation:

1. Institute of RF‐& OE‐ICs Southeast University Nanjing China

2. Engineering Research Center of RF‐ICs and RF‐Systems Ministry of Education China

3. Engineering Research Center of RF‐& OE‐ICs Jiangsu Province, Southeast University Nanjing China

Abstract

AbstractThis letter presents a sub‐6 GHz wideband low noise amplifier (LNA) based on a double L‐type load network and utilizes the negative feedback technique. Using the cascode structure, along with the aforementioned techniques, it is possible to achieve a single‐stage wideband LNA with high gain and low noise figure (NF). Fabricated in 110‐nm SOI CMOS technology, the proposed LNA achieves a maximum power gain of 15.2 dB, noise figure of 1.0–1.56 dB. The 3‐dB bandwidth ranges from 3.05 to 4.55 GHz. The minimum power input at 1 dB compression point (IP1dB) is −17.1 dBm. The LNA area is 0.18 mm2 and dissipates a total power of 11.5 mW from a 1.4‐V power supply.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

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