A 0.4-to-30 GHz CMOS Low Noise Amplifier With Input-Referred Noise Reduction and Coupled-Inductive-Peaking Technique
Author:
Affiliation:
1. School of Microelectronics, Tianjin University, Tianjin, China
2. 54th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, China
Funder
National Natural Science Funds of China
Natural Science Foundation of Jiangsu Province
Special Major Basic Research Program of Hebei Province
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/9944983/10144809/10114806.pdf?arnumber=10114806
Reference15 articles.
1. A 2.87±0.19 dB NF 3.1~10.6 GHz ultra-wideband low-noise amplifier using 0.18 ?m CMOS technology;wu;Proc IEEE Radio Wireless Symp,2012
2. A Millimeter-Wave (23–32 GHz) Wideband BiCMOS Low-Noise Amplifier
3. A Wideband 2–5 GHz Noise Canceling Subthreshold Low Noise Amplifier
4. A low supply voltage SiGe LNA for ultra-wideband frontends
5. High-Performance Wideband Low-Noise Amplifier Using Enhanced $\pi$-Match Input Network
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