A 1.46–1.96-dB-NF 2.1–5.2-GHz Wideband Passive Balun LNA in 22-nm CMOS-Reference-Cited by-同舟云学术

A 1.46–1.96-dB-NF 2.1–5.2-GHz Wideband Passive Balun LNA in 22-nm CMOS

Published:2023-09 Issue:9 Volume:70 Page:3378-3382
ISSN:1549-7747
Container-title:IEEE Transactions on Circuits and Systems II: Express Briefs
language:
Short-container-title:IEEE Trans. Circuits Syst. II

Author:

Wang Xiaowei¹^ORCID,Li Zhiqun¹^ORCID,Li Zhennan¹

Affiliation:

1. Institute of RF- & OE-ICs, Engineering Research Center of RF-ICs and RF-Systems, Ministry of Education, China Engineering Research Center of RF- & OE-ICs, Southeast University, Nanjing, Jiangsu, China

Funder

National Key Research and Development Program of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8920/10235305/10120991.pdf?arnumber=10120991

Reference17 articles.

1. A $K$ -Band Frequency Doubler With 35-dB Fundamental Rejection Based on Novel Transformer Balun in 0.13- $\mu \text{m}$ SiGe Technology

2. A Full Ka-Band Power Amplifier With 32.9% PAE and 15.3-dBm Power in 65-nm CMOS

3. A 5–6 GHz low-noise amplifier with65-dB variable-gain control in 22nm FinFET CMOS technology;yeh;Proc IEEE Radio Freq Integr Circuits Symp (RFIC),2020

4. A 0.044-mm2 0.5-to-7-GHz Resistor-Plus-Source-Follower-Feedback Noise-Cancelling LNA Achieving a Flat NF of 3.3±0.45 dB

5. A W-Band Injection-Locked Frequency Doubler Based on Top-Injected Coupled Resonator

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