pMOS dosimeter with two-layer gate oxide operated at zero and negative bias
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19940196?crawler=true&mimetype=application/pdf
Reference7 articles.
1. The Development of an MOS Dosimetry Unit for Use in Space
2. Design Criteria for a High-Dose MOS Dosimeter for Use in Space
3. Calibration and Flight Testing of a Low-Field pMOS Dosimeter
4. Linearity of pMOS radiation dosimeters operated at zero bias
5. Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors
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3. The isochronal annealing of irradiated n-channel power VDMOSFETs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-01
4. P-channel MOSFET as a sensor and dosimeter of ionizing radiation;Facta universitatis - series: Electronics and Energetics;2016
5. Sensitivity and fading of pMOS dosemeters irradiated with X-ray radiation doses from 1 to 100 cGy;Radiation Protection Dosimetry;2015-02-16
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