The isochronal annealing of irradiated n-channel power VDMOSFETs-Reference-Cited by-同舟云学术

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The isochronal annealing of irradiated n-channel power VDMOSFETs

Published:2016-01 Issue: Volume:366 Page:171-178
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Ristić Goran S.,Andjelković Marko,Savović Svetislav

Funder

Ministry of Education, Science and Technological Development of the Republic of Serbia

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference36 articles.

1. Characteristics of thermal annealing of radiation damage in MOSFETs;Danchenko;J. Appl. Phys.,1968

2. The nature of the hole traps in reoxidized nitrided oxide gate dielectrics;Mallik;J. Appl. Phys.,1993

3. Experimental determination of the frequency factor of thermal annealing processes in metal–oxide semiconductor gate–oxide structures;Saigné;J. Appl. Phys.,1997

4. Experimental validation of an accelerated method of oxide-trap-level characterization for predicting long term thermal effects in metal oxide semiconductor devices;Saigné;IEEE Trans. Nucl. Sci.,1997

5. Prediction of low dose-rate effects in power metal oxide semiconductor field effect transistors based on isochronal annealing measurements;Dusseau;J. Appl. Phys.,1997

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1. Study of High-Energy Proton Irradiation Effects in Top-Gate Graphene Field-Effect Transistors;Electronics;2023-11-30

2. Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress;Journal of Circuits, Systems and Computers;2022-07-07

3. Radiation sensitive detector based on field-effect transistors;Radioelectronics and Communications Systems;2017-09

4. Rapid and long-term gamma-radiation annealing in low-dropout voltage regulators;Nuclear Technology and Radiation Protection;2017

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