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70 GSa/s and 51 GHz bandwidth track‐and‐hold amplifier in InP DHBT process

  • Published:2013-03 Issue:6 Volume:49 Page:388-389
  • ISSN:0013-5194
  • Container-title:Electronics Letters
  • language:en
  • Short-container-title:Electron. lett.

Author:

Deza J.1,Ouslimani A.2,Konczykowska A.1,Kasbari A.2,Godin J.1,Pailler G.3

Affiliation:

1. III‐V Lab (joint research lab between Alcatel‐Lucent Bell LabsThales Research Technology and CEA/LETI)route de NozayMarcoussis91460France

2. ECS‐Lab6 avenue du PonceauCergy95014France

3. Thales Systèmes Aéroportés10 avenue de la 1ère DFLBrest29200France

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Reference5 articles.

1. A 50 GHz small‐signal‐bandwidth 50 GSa/s track‐and‐hold amplifier in InP DHBT technology;Deza J.;IEEE MTT‐S Int. Microw. Symp. Dig.,2012

2. 65 GHz small-signal-bandwidth switched emitter follower in InP heterojunction bipolar transistors

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1. Time-Interleaved Switched Emitter Followers to Extend Front-End Sampling Rates to up to 200 GS/s;IEEE Journal of Solid-State Circuits;2022-09

2. Analysis and Design of a Charge Sampler With 70-GHz 1-dB Bandwidth in 130-nm SiGe BiCMOS;IEEE Transactions on Circuits and Systems I: Regular Papers;2021-09

3. 64-GS/s 6-Bit Track-and-Hold Circuit with More Than 61 GHz Bandwidth at 1.0 Vpp Input Voltage Swing in 90-nm SiGe BiCMOS Technology;2021 IEEE International Symposium on Circuits and Systems (ISCAS);2021-05

4. A low sampling clock, high bandwidth, master‐slave track and hold amplifier;International Journal of RF and Microwave Computer-Aided Engineering;2019-11-05

5. A 70 GHz Small-signal Bandwidth 40 GS/s Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology;2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS);2019-11
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