75 nm T‐shaped gate for In 0.17 Al 0.83 N/GaN HEMTs with minimal short‐channel effect
Author:
Affiliation:
1. School of Information and CommunicationsGwangju Institute of Science and Technology1 Oryong‐dongBuk‐guGwangju500‐712Republic of Korea
2. Department of Material Sciences & EngineeringYonsei UniversitySeoul120‐749Republic of Korea
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2013.2769
Reference11 articles.
1. GaN-Based RF Power Devices and Amplifiers
2. Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices
3. Power electronics on InAlN/(In)GaN: Prospect for a record performance
4. Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors
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2. Fabrication and Characterization of In0.53Ga0.47As/InAs/In0.53Ga0.47As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate;Micromachines;2022-12-25
3. Electrical properties of 90-nm InAlN/GaN HEMT on silicon substrate;Physica E: Low-dimensional Systems and Nanostructures;2021-10
4. DC and Microwave Characteristics of Lg 20 nm T-Gate Enhancement Mode Al0.5Ga0.5N/AlN/GaN/Al0.08Ga0.92N High Electron Mobility Transistor for Next Generation High Power Millimeter Wave Applications;Journal of Nanoelectronics and Optoelectronics;2018-02-01
5. Static and dynamic characteristics of L g 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications;Journal of Science: Advanced Materials and Devices;2017-12
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